2SC5171,MATUDQ(J Overview\\n2SC5171,MATUDQ(J is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SC5171...
2SC5171,MATUDQ(J Overview\\n2SC5171,MATUDQ(J is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SC5171... more
Model Number:2SC5171,MATUDQ(J
Part Number:2SC5171,MATUDQ(J
Manufacturer:Toshiba Electronic Devices and Storage Corporation
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ... more
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1930 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. ... more
