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Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ...
Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ... more
Brand Name:PHILIPS
Model Number:BF981
Place of Origin:Netherland
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... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...
... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ... more
Brand Name:STMicroelectronics
Model Number:STL150N3LLH5
Place of Origin:CHN
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...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet
...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet more
Brand Name:Hua Xuan Yang
Model Number:12N60
Place of Origin:ShenZhen China
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...Channel MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET...
...Channel MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET... more
Brand Name:Infineon Technologies
Model Number:IRFP2907PBF
Place of Origin:original
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...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet...
...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet... more
Brand Name:Original brand
Model Number:IRF640NSTRLPBF
Place of Origin:Original Manufacturer
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... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed...
... IRF7103TRPBF N-Channel MOSFETProduct Introduction of Infineon IRF7342TRPBF N-Channel MOSFET 1. Product Overview Infineon IRF7103342TRPBF is a high-performance N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) developed... more
Brand Name:INFINEON
Model Number:IRF7342TRPBF
Minimum Order Quantity:1pcs
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...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET...
...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET... more
Brand Name:IOR
Model Number:IRFP260NPBF
Place of Origin:CHINA
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...
...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs... more
Brand Name:IRF
Model Number:IRLML6402TRPBF
Place of Origin:Original
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... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V
... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V more
Brand Name:ON
Model Number:NTMFS4833NT1G
Place of Origin:America
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Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance...
Product Description: The High Power MOSFET is an advanced semiconductor device designed to meet the demanding requirements of modern electronic applications. As a high power n channel MOSFET, this product is engineered to deliver exceptional performance... more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
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...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ...
...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ... more
Brand Name:OTOMO
Model Number:8205A
Place of Origin:ShenZhen China
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High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...
High Power MOSFET FDMS1D2N03DSD Power Clip Asymmetric Dual N-Channel MOSFET, 30 V [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize... more
Brand Name:ONSEMI
Model Number:FDMS1D2N03DSD
Place of Origin:China
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...Mosfet Array, 2 N-Channel (Half Bridge) Module. Specification Of FF2MR12KM1HOSA1 Part Number FF2MR12KM1HOSA1 Series CoolSiC™ Configuration 2 N-Channel (Half Bridge) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current -
...Mosfet Array, 2 N-Channel (Half Bridge) Module. Specification Of FF2MR12KM1HOSA1 Part Number FF2MR12KM1HOSA1 Series CoolSiC™ Configuration 2 N-Channel (Half Bridge) Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - more
Brand Name:Original Factory
Model Number:FP75R12N2T4BPSA1
Place of Origin:CN
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low ...
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low ... more
Brand Name:IXYS
Model Number:IXFK27N80Q
Place of Origin:Original Factory
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... Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id)
... Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series MOSFET Package Tape & Reel (TR) Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) more
Brand Name:Diodes Incorporated
Model Number:W5500
Place of Origin:Taiwan
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...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ...
...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ... more
Brand Name:Infineon / IR
Model Number:IRLML5203TRPBF
Place of Origin:CHIAN
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...Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...
...Channel Mosfet SMD SMT Mounting Style IPD25N06S4L-30 Fet patch to-252 25A 60V MOSFET screen 4N06L30N channel DPAK-2 OptiMOS-T2 Product Attribute Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... more
Brand Name:INFINEON
Model Number:IPD25N06S4L-30
Place of Origin:INFINEON
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FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state...
FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state... more
Brand Name:Ti
Model Number:FDS6681Z
Minimum Order Quantity:Contact us
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...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF640NPBF
Place of Origin:Original Factory
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... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and more
Brand Name:Original Brand
Model Number:IRLML6402TRPBF
Place of Origin:CN
