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Brand Name:VBE
Model Number:VBE80R6H
Place of Origin:CHINA
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...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...
...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor... more
Brand Name:Diodes Incorporated
Model Number:BS816A-1
Place of Origin:USA
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.
.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects. more
Brand Name:TeXin
Model Number:TX-50W
Place of Origin:Shenzhen China
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ... more
Brand Name:Anterwell
Model Number:2SC1972
Place of Origin:original factory
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...RF transistor is designed for low noise and high current-gain bandwidth product applications. It is suitable for use in VHF RF amplifiers, local oscillators, and mixers. The device features a compact SOT-23 package. Product Attributes Product Type: NPN RF Transistors...
...RF transistor is designed for low noise and high current-gain bandwidth product applications. It is suitable for use in VHF RF amplifiers, local oscillators, and mixers. The device features a compact SOT-23 package. Product Attributes Product Type: NPN RF Transistors... more
Model Number:2SC2757 T33
Emitter-Base Voltage(Vebo):5V
Current - Collector Cutoff:100nA
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers...
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers... more
Brand Name:Analog Devices Inc.
Model Number:AD9361BBCZ
Place of Origin:Multi-origin
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...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF...
...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF... more
Brand Name:Motorola
Model Number:MHW903
Place of Origin:Freescale Semiconductor
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... more
Brand Name:Mitsubishi Electric Semiconductor
Model Number:2SC1971
Place of Origin:CHINA
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... options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems
... options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems more
Brand Name:MYT
Model Number:1.2Ghz 30W anti drone module
Place of Origin:China
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...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor...
...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor... more
Brand Name:INNOTION
Model Number:YP801241T
Place of Origin:Jiangsu, China
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...RF Power Amplifier Module This 400-3000MHz RF Module 50W Power Amplifier is a no signal source power amplifier module delivering 50W output power. Available in multiple frequency ranges including 400-3000MHz, 2500-6000MHz, and 6000-8000MHz RF PA configurations. Key Features Ultra-Wideband Performance Seamless coverage from 400MHz to 3000MHz, eliminating the need for multiple narrow-band amplifiers...
...RF Power Amplifier Module This 400-3000MHz RF Module 50W Power Amplifier is a no signal source power amplifier module delivering 50W output power. Available in multiple frequency ranges including 400-3000MHz, 2500-6000MHz, and 6000-8000MHz RF PA configurations. Key Features Ultra-Wideband Performance Seamless coverage from 400MHz to 3000MHz, eliminating the need for multiple narrow-band amplifiers... more
Brand Name:PTC
Model Number:PTC-A4030-50W
Place of Origin:Shenzhen China
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..., no damage to the power amplifier even during open circuit or short circuit. Specifications Model number: HCTD-4055-2 Product name: TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA High linearity Number of channels: 2
..., no damage to the power amplifier even during open circuit or short circuit. Specifications Model number: HCTD-4055-2 Product name: TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA High linearity Number of channels: 2 more
Brand Name:Hincn
Model Number:HCTD-4055-2
Place of Origin:China
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RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to 10dBm. The supply current is 2500mA, and the package type is available as either surface mount or through hole. This high power radio amplifier...
RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to 10dBm. The supply current is 2500mA, and the package type is available as either surface mount or through hole. This high power radio amplifier... more
Brand Name:MXT
Model Number:PA1268T1624M 10W-28V
Place of Origin:China
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High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-... more
Brand Name:Kimpok Technology / OEM
Model Number:KP-LAM800-25W
Place of Origin:China
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...400-6000MHz All-Alumium Cavity Solid State RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features include: ...
...400-6000MHz All-Alumium Cavity Solid State RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features include: ... more
Brand Name:SWT
Model Number:SW-PA-04006000-33C
Place of Origin:China
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High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-... more
Brand Name:Ding Shen
Model Number:DS-LAM800-25W
Place of Origin:China
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...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all
...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all more
Brand Name:OEM
Place of Origin:China
Model NO.:PF-MD26Y
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... 47±1dB Gain Efficiency ≤35% In-band Fluctuatio ≤3.0dB EVM Input and Output Standing Waves ACLR Swift Amplifier power supply RF response (amplifier on and off) The amplifier is turned on at
... 47±1dB Gain Efficiency ≤35% In-band Fluctuatio ≤3.0dB EVM Input and Output Standing Waves ACLR Swift Amplifier power supply RF response (amplifier on and off) The amplifier is turned on at more
Brand Name:LDSK
Place of Origin:Guangdong, China
Price:$2500~$2860
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... amplifier Working Frequency (MHz) 800MHz+50MHz Max output power(dBm) 32dBm±1dBm (No ALC control) Passband group ...
... amplifier Working Frequency (MHz) 800MHz+50MHz Max output power(dBm) 32dBm±1dBm (No ALC control) Passband group ... more
Brand Name:Huanuo
Model Number:HN-PA2W
Place of Origin:China
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...Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(typical 5.5mΩ) Fast switching Power Jfet Transistor...
...Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(typical 5.5mΩ) Fast switching Power Jfet Transistor... more
Brand Name:JC
Model Number:OSPF12N65C
Place of Origin:Jiangxi, China
