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...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...
...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor... more
Brand Name:Diodes Incorporated
Model Number:BS816A-1
Place of Origin:USA
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...RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF...
...RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF... more
Model Number:BFP420H6327
Emitter-Base Voltage(Vebo):1.5V
Current - Collector Cutoff:100nA
Wideband silicon npn rf transistor Infineon BFP420H6327 ideal for oscillators up to 10 ghz frequency
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF...
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF... more
Brand Name:Analog Devices Inc.
Model Number:AD9361BBCZ
Place of Origin:Multi-origin
AD9361BBCZ High Power Rf Transistor
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...
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... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
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Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ...
Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ... more
Brand Name:Anterwell
Model Number:BFR91A
Place of Origin:original factory
BFR91A Power Mosfet Transistor Silicon NPN Planar RF Transistor
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SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...
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Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...
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...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
Brand Name:NXP
Model Number:BFS505
Place of Origin:CHINA
BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ... more
Brand Name:Original brand
Model Number:A3G20S250-01SR3
Place of Origin:Original
Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor...
...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor... more
Brand Name:NXP Semiconductors
Model Number:AFT05MS003NT1
Certification:RoHS
AFT05MS003NT1 NXP MOSFET Transistors N Channel 500mV 30V RF Power
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...Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF
...Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF more
Brand Name:Vishay / Siliconix
Model Number:IRFP260
Part no.:IRFP260
IRFP260 MOSFET Transistor IC Chip TO-247-3 High Powered Through Hole
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SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2 Ohm @ 10mA, 4V Vgs(th) (...
SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2 Ohm @ 10mA, 4V Vgs(th) (... more
Place of Origin:Original
Part Number:SSM6N48FU,RF(D
Manufacturer:Toshiba Semiconductor and Storage
SSM6N48FU,RF(D Field Effect Transistor Transistors FETs MOSFETs Arrays
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...
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...RF VCO 8dBm 615MHZ-950MHz Voltage Controlled Oscillator for Intergrated Circuit ChipYSGM060808 with High Output Power Product Description YSGM060808 is a highly integrated, standard package size VCO, using a high cut-off frequency RF transistor as an oscillating tube with high output power and good isolation. This VCO uses high stability oscillation circuit structure, high precision varactor diode and high output power RF...
...RF VCO 8dBm 615MHZ-950MHz Voltage Controlled Oscillator for Intergrated Circuit ChipYSGM060808 with High Output Power Product Description YSGM060808 is a highly integrated, standard package size VCO, using a high cut-off frequency RF transistor as an oscillating tube with high output power and good isolation. This VCO uses high stability oscillation circuit structure, high precision varactor diode and high output power RF... more
Brand Name:RFint
Model Number:YSGM060808
Place of Origin:Jiangsu, China
RF VCO 8dBm 615-950MHz Voltage Controlled Oscillator with High Output Power