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... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ●
... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ● more
Brand Name:JUYI
Model Number:JY2504NPM
Place of Origin:China
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AO3406 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V For Use As A Load Switch Package SOT-23-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive ...
AO3406 MOSFET Power Electronics Discrete Semiconductor N-Channel 30V For Use As A Load Switch Package SOT-23-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive ... more
Brand Name:AOS
Model Number:AO3406
Place of Origin:original
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Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK ...
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK ... more
Brand Name:Hua Xuan Yang
Model Number:AOD413A
Place of Origin:ShenZhen China
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...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP)
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) more
Brand Name:ST Micro electronics
Model Number:STI20N60M2-EP
Place of Origin:Shenzhen, China
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... Chennel 30V MOSFET With Fast Switching Speed For Inverter Applications General Description The JY12M is a type of power field transistor designed in both N and P Channel logic enhancement mode. These transistors are manufactured using a high cell density...
... Chennel 30V MOSFET With Fast Switching Speed For Inverter Applications General Description The JY12M is a type of power field transistor designed in both N and P Channel logic enhancement mode. These transistors are manufactured using a high cell density... more
Brand Name:JUYI
Model Number:JY12M
Place of Origin:China
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General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...
General Description: The JY16M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ... more
Brand Name:JUYI
Model Number:JY16M
Place of Origin:China
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...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching
...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching more
Brand Name:HT
Model Number:F7N65L TO-220F-3L
Place of Origin:China
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... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.) more
Brand Name:Hua Xuan Yang
Model Number:HXY1404S
Place of Origin:ShenZhen China
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P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ...
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4.5V) General Description The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ... more
Brand Name:AOSMD
Model Number:AO4449
Place of Origin:brand new
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...Mosfet Power Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET...
...Mosfet Power Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET... more
Brand Name:Ti
Model Number:FDT3612
Minimum Order Quantity:Contact us
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in more
Brand Name:Infineon
Model Number:IRF9540NPBF
Place of Origin:Original Factory
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... on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very
... on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very more
Brand Name:STMicroelectronics
Model Number:STP110N8F6
Minimum Order Quantity:Negotiable
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...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use... more
Brand Name:IOR
Model Number:IRF3205PBF
Place of Origin:CHINA
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...MOSFET Module 24V Trigger 8 CH For Home Intelligent Control What is transistor Transistor, a solid-state semiconductor device, can be used for detection, rectification, amplification, switching, regulation, signal modulation, and many other functions. The transistor acts as a variable switch, controlling the outflow of current based on the input voltage, so the transistor can be used as a current switch...
...MOSFET Module 24V Trigger 8 CH For Home Intelligent Control What is transistor Transistor, a solid-state semiconductor device, can be used for detection, rectification, amplification, switching, regulation, signal modulation, and many other functions. The transistor acts as a variable switch, controlling the outflow of current based on the input voltage, so the transistor can be used as a current switch... more
Brand Name:GINRI
Model Number:JR-8J
Place of Origin:CHINA
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... MOSFET transistor. With a superior voltage tolerance of up to 600 volts and a maximum current capacity of 80 amps, this N-channel power MOSFET is perfect for a wide range of switching applications. Its versatility allows it to be used as a switch or
... MOSFET transistor. With a superior voltage tolerance of up to 600 volts and a maximum current capacity of 80 amps, this N-channel power MOSFET is perfect for a wide range of switching applications. Its versatility allows it to be used as a switch or more
Brand Name:Original
Model Number:OSG65R038HZ
Place of Origin:Guangdong, China
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SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...
SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ... more
Brand Name:Huixin
Model Number:BC2301
Place of Origin:China
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...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB T/R Relay driver High-speed line driver Low-side loadswitch Switching...
...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET N-CH 60V 0.19A 3-Pin TO-236AB T/R Relay driver High-speed line driver Low-side loadswitch Switching... more
Brand Name:original
Model Number:NX7002AK,215
Minimum Order Quantity:discussible
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... building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Simplified Operation A transistor can use a small signal applied between
... building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Simplified Operation A transistor can use a small signal applied between more
Brand Name:Upperbond
Model Number:Maker
Place of Origin:China
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...MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs developed using
...MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalanche tested andbull; Low input capacitance and gate charge andbull; Low gate input resistance andnbsp; Applications andbull; Switching applications andnbsp; Description These devices are N-channel Power MOSFETs developed using more
Brand Name:STMicroelectronics
Model Number:STF28NM50N
Place of Origin:China
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...Mosfet Transistor Sak-tc387qp Sak-tc387qp-160f300s Ae Tc387qp-160f300s Electronics Components A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of transistor that is commonly used in electronic circuits as a switching device. It is a three-terminal device that consists of a gate, a source, and a drain. The MOSFET operates by controlling the flow of current between the source and the drain using...
...Mosfet Transistor Sak-tc387qp Sak-tc387qp-160f300s Ae Tc387qp-160f300s Electronics Components A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of transistor that is commonly used in electronic circuits as a switching device. It is a three-terminal device that consists of a gate, a source, and a drain. The MOSFET operates by controlling the flow of current between the source and the drain using... more
Brand Name:INFINEON
Model Number:SAK-TC387QP-160F300S AE
Place of Origin:Original Brand
